Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling
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Furthermore, we look at the potential use of topological insulators for nano-electronic applications.
Semiclassical analytical models describing the two different tunneling components in a TFETs: point tunneling and line tunneling will be discussed, as well as improvements of the BTBT modeling in direct semiconductors such as graphene, III-V semiconductors as well as germanium, which is found to behave as a direct semiconductor in TFETs. A general formalism to study BTBT in indirect semiconductors will be presented to demonstrate the impact of field-induced quantum confinement in TFETs, namely large shifts in onset voltages and deteriorated subthreshold slopes compared to semiclassical models.
Furthermore, a model for optimal doping of the tunnel FET and a good figure of merit to asses the performance of TFETs will be discussed. We conclude with a novel promising 2D topological insulator consisting of a single layer of tin which we refer to as "stannanane" and discuss its properties and its possible use in future nano-electronics. William Vandenberghe received the M. Leuven , Belgium in In he obtained his Ph. Leuven under the supervision of prof.
Guido Groeseneken K.
Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling
Leuven and prof. Wim Magnus Universiteit Antwerpen. In , he was a visiting researcher and from until present he is a research associate at the University of Texas at Dallas in the group of prof. A brief review of physical mechanisms and defects present during current deep-submicron device processing will be presented. Some of the most representative simulation examples compared to experimental data will be presented. Finally, further advances and future prospects of atomistic KMC process simulation will be assessed.
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Recommended lectures: - M. Rubio, P.
Nano-Electronic Devices on Apple Books
Castrillo, L. Pelaz, L. Barbolla, G. Gilmer, C. Dabrowski and E. Weber Eds. Predictive Simulation of Semiconductor Processing, pp. Elsevier Science - J.
Rubio, M. Jaraiz, P. Castrillo, I. He joined the Department of Electronics and Electrical Engineering at the University of Glasgow in , and served as a Head of Department in He has pioneered the simulations and the study of various sources of intrinsic parameter fluctuations in decanano- and nano-CMOS devices including random dopants, interface roughness and line edge roughness.
In the last 5 years he has given also more than 65 invited talks at prestigious international conferences and meetings in Europe, USA and Japan. Intrinsic parameter fluctuations associated with discreteness of charge and granularity of matter are now a major factor limiting scaling and integration. The accurate modelling and simulation of such effects is a very important for the development of the present and next generations semiconductor device and their integration of giga-transistor count chips.
The impact of interface roughness and stray charges on the current variations in nanowire transistors. He is the author or co-author of more than technical journal papers and communications at international conferences including invited contributions. He is the author or the editor of 17 books, and he has organized 16 international conferences. His expertise is in the area of the electrical characterization and modeling of semiconductor materials and devices, with special interest for silicon-on-insulator structures. He has supervised more than 60 PhD completions. Lecture: Characterization techniques.
The goal of this class is to offer a comprehensive view of the general strategy and dedicated methods for electrical characterization of semiconductor materials and devices.
SOI will serve as a key example, for two reasons: i it is a growing technology for micro- and nano-electronics, and ii it has multiple facets that need to be correctly captured and understood. The evaluation of SOI structures is hampered by several problems: thinness of the film, presence of the BOX, stacked interfaces, typical defects, strain, etc. The electrical properties are of uppermost interest as they directly impact on the design and performance of integrated circuits.
A number of conventional methods can be borrowed from bulk Si and adapted to SOI whereas other methods are no longer applicable in thin films. Fortunately novel techniques, such as the pseudo-MOS transistor for in-situ material probing, can be conceived and implemented. We will next see how to manipulate the MOSFET in order to reveal, from its static and dynamic characteristics, key parameters like carrier mobility and lifetime, threshold voltage, self-heating, leakage currents, etc.
Various parameter extraction methods for the evaluation of the series resistance, interface traps and oxide defects will be critically compared. A direct application is the monitoring of radiation-induced damage and hot-carrier reliability effects. More sophisticated techniques like split-CV, geometric magnetoresistance and low-temperature transport are very successful for universal mobility characterization in very advanced MOSFETs.
The charge pumping, transient currents, and noise spectroscopy will also be evoked.
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We will see the appropriate treatment for multiple channels. Independently, each channel informs on the quality of the nearby interface.
brb.swirlonthru.com/kuxy-app-to.php The multi-channel coupling effects are more complex and basically have a two-fold impact: they alter the measurement signature but, in turn, they can be taken advantage of for detailed analysis of the physics mechanisms. This class is designed to provide helpful guiding for proper measurement rather than to be an exhaustive catalogue of techniques. He worked then on the electronic transport properties of disordered matter. Jaouen has published over 50 papers in the area of microelectronics and holds 18 granted US patents in the field. His research interest covers: physics of electronic transport, quantum and solid state phenomena, physics of electrical, mechanical and electro-mechanical properties of materials and devices, modeling and simulation of technological processes and electrical behavior of devices, CMOS, BiCMOS , Analog and RF technologies , devices and associated compact modeling.
Lecture: Simulation challenges in microelectronics. The Computer market is one of the leading applications that are more and more driving the technology development, in term of performances, speed and density. This is also true for other applications such as the mobile telecommunication segment market or the flash memory business.
For keeping a competitive edge versus competitors, circuits using the most advanced technology must be presented as early as possible on the market place. In this framework, simulation plays a more and more important role in the advanced technology development.
Its role can be summarized as follow. This course will give the main challenges in the process and the device simulation areas for their use with the most advanced technology development. Density functional tight-binding applied to the transport simulation of nanotransistors A. Di Carlo. From ab-initio to semi-empirical theories of nanostructures M. Noise in nanoelectronics G. Deterministic solution of the BTE C. Introduction to the tight-binding modelization of semiconductor nanostructures Y. P methods F.